Electronic structure of Cl2from 5 to 15 eV by electron energy loss spectroscopy

Author:

Spence David,Huebner R. H.,Tanaka H.,Dillon M. A.,Wang R.‐G.

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Cited by 35 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Scaled plane-wave Born cross sections for atoms and molecules;Reviews of Modern Physics;2016-05-19

2. Electronic properties of HBr, O2and Cl2used in Si etching;Japanese Journal of Applied Physics;2015-05-28

3. Electron Interactions with Cl2, CCl2F2, BCl3, and SF6;Fundamental Electron Interactions with Plasma Processing Gases;2004

4. Electron Interactions With Cl2;Journal of Physical and Chemical Reference Data;1999-01

5. Cl2 Plasma — Si Surface Interactions in Plasma Etching: X-ray Photoelectron Spectroscopy After Etching, and Optical and Mass Spectrometry Methods During Etching;Plasma Processing of Semiconductors;1997

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