Photoluminescence properties of erbium doped InGaN epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3193532
Reference11 articles.
1. Luminescence properties of erbium in III–V compound semiconductors
2. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
3. 1.54‐μm photoluminescence from Er‐implanted GaN and AlN
4. Electroluminescence from erbium and oxygen coimplanted GaN
5. Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy
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1. High thermoelectric power factor in ambient-stable semiconducting rare-earth ErN thin films;Applied Physics Letters;2021-03-29
2. A Computational Study of the Electronic and Magnetic Properties of Rare Earth (Er)-Doped InGaN;SPIN;2018-09
3. MOCVD growth of Er-doped III-N and optical-magnetic characterization;Rare Earth and Transition Metal Doping of Semiconductor Materials;2016
4. Revisiting Impurity Doping of III-Nitride Materials for Photonic Device Applications;ECS Transactions;2013-03-15
5. Studies on the InGaGdN/GaN magnetic semiconductor heterostructures grown by plasma-assisted molecular-beam epitaxy;Journal of Crystal Growth;2011-05
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