Manipulation of the structural and optical properties of InAs quantum dots by using various InGaAs structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1621714
Reference17 articles.
1. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
2. InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
3. Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography
4. Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs
5. Quantum dot lasers: The birth and future trends
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1. Defect annihilation-mediated enhanced activation energy of GaAs 0.979 N 0.021 -capped InAs/GaAs quantum dots by H − ion implantation;Thin Solid Films;2017-10
2. Carrier dynamics of strain-engineered InAs quantum dots with (In)GaAs surrounding material;Journal of Optics;2017-01-16
3. Introduction to Quantum Dots;Impact of Ion Implantation on Quantum Dot Heterostructures and Devices;2017
4. Optoelectronic properties of Ni–GaP diodes with a modified surface;Physica E: Low-dimensional Systems and Nanostructures;2016-09
5. Emission characteristics of shape-engineered InAs/InAlGaAs quantum dots subjected to thermal treatments;Journal of the Korean Physical Society;2016-07
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