Flow effects in epitaxial autodoping
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328316
Reference5 articles.
1. Autodoping Effects in Silicon Epitaxy
2. Gas Flow Pattern and Mass Transfer Analysis in a Horizontal Flow Reactor for Chemical Vapor Deposition
3. Diffusion Coefficients in Gaseous Systems
4. Kinetics of Lateral Autodoping in Silicon Epitaxy
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reactor dependent starting transients of doping profiles in MOVPE grown GaN;Journal of Crystal Growth;2011-04
2. The control and modeling of doping profiles and transients in MOVPE growth;Journal of Crystal Growth;1988
3. Metal-organic vapor phase epitaxy of compound semiconductors;Materials Science Reports;1987-03
4. CVD Epitaxial Autodoping in Bipolar VLSI Technology;Journal of The Electrochemical Society;1985-12-01
5. Antimony, Arsenic, Phosphorus, and Boron Autodoping in Silicon Epitaxy;Journal of The Electrochemical Society;1985-08-01
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