Reactor dependent starting transients of doping profiles in MOVPE grown GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Control of the Mg doping profile in III-N light-emitting diodes and its effect on the electroluminescence efficiency
2. Flow effects in epitaxial autodoping
3. Oxygen gettering by graphite baffles during organometallic vapor phase epitaxial AlGaAs growth
4. H2Se “memory effects” upon doping profiles in GaAs grown by metalorganic chemical vapor deposition (MO-CVD)
5. The control and modeling of doping profiles and transients in MOVPE growth
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4. Comparison of morphology, structure and optical properties of GaN powders prepared by Ga2O3 nitridation and gallium nitridation;Journal of Crystal Growth;2013-03
5. Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1−xN;Journal of Applied Physics;2013-02-21
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