Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires
Author:
Affiliation:
1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
Funder
MEXT | Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
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1. Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels;Journal of Applied Physics;2022-07-14
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