Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate-Reference-Cited by-同舟云学术

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Published:2015-09-07 Issue:10 Volume:107 Page:103506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Freedsman J. J.¹^ORCID,Watanabe A.¹,Urayama Y.¹,Egawa T.¹²

Affiliation:

1. Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555, Japan

2. Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555, Japan

Funder

Japan Science and Technology Agency (JST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4930876

Reference26 articles.

1. High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate

2. Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency

3. Characterization of InAlN/GaN high-electron-mobility transistors grown on Si substrate using graded layer and strain-layer superlattice

4. Positive Threshold-Voltage Shift of Y2O3Gate Dielectric InAlN/GaN-on-Si (111) MOSHEMTs with Respect to HEMTs

5. Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al2O3/AlInN/GaN MIS-HEMT

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