Backscattering analysis of AuGe‐Ni ohmic contacts ofn‐GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337767
Reference14 articles.
1. Metal-semiconductor contacts for GaAs bulk effect devices
2. Characteristics of AuGeNi ohmic contacts to GaAs
3. Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques
4. Thermal emission rates and capture cross-section of majority carriers at titanium levels in silicon
5. Effects of the Heating Rate in Alloying of An-Ge ton-Type GaAs on the Ohmic Properties
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1. Development of refractory ohmic contact materials for gallium arsenide compound semiconductors;Science and Technology of Advanced Materials;2002-01
2. Recent developments in ohmic contacts for III–V compound semiconductors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-09
3. Rapid Electron Beam and Optical Furnace Alloying of AuGe/Ni Contacts to GaAs;Physica Status Solidi (a);1991-05-16
4. On the Determination of the Specific Contact Resistance of Alloyed Contacts to n-GaAs;Japanese Journal of Applied Physics;1990-10-20
5. X‐ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy studies of the effects of Ni layer on AuGe/GaAs(100) interface;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1990-05
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