Effects of the Heating Rate in Alloying of An-Ge ton-Type GaAs on the Ohmic Properties-Reference-Cited by-同舟云学术

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Effects of the Heating Rate in Alloying of An-Ge ton-Type GaAs on the Ohmic Properties

Published:1975-07 Issue:7 Volume:14 Page:1071-1072
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yokoyama Naoki,Ohkawa Shinji,Ishikawa Hajime

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/14/i=7/a=1071/pdf

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of a Gunn-diode current-pulse generator for modulation of semiconductor lasers;Technical Physics;1999-05

2. Semiconductor-Laser Devices — Fabrication and Characteristics;Process Technology for Semiconductor Lasers;1996

3. The Low Specific Ohmic Contact Resistivity of Alloyed Ge—LOW—Content Au on Si—Implanted Electrically—Active GaAs Crystal Layers;MRS Proceedings;1993

4. Mechanisms for the formation of low temperature, non-alloyed Au-Ge ohmic contacts to n-GaAs;Journal of Electronic Materials;1990-11

5. The Effects of Ion Beam Mixing on Rapid Thermal Annealed Ohmic Contacts to N-GaAs;MRS Proceedings;1990

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