Al0.3Ga0.7P0.01As0.99GaAs laser heterostructures grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331575
Reference25 articles.
1. cw electro‐optical characteristics and preliminary reliability of double‐heterostructure GaAs‐AlxGa1−xAs lasers grown by molecular beam epitaxy
2. Continuously operated (Al,Ga)As double‐heterostructure lasers with 70 °C lifetimes as long as two years
3. The reliability of a practical Ga<inf>1-x</inf>Al<inf>x</inf>As laser device
4. Reliability of DH GaAs lasers at elevated temperatures
5. Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy
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1. Films and Devices Deposited by Hwcvd at Ultra High Deposition Rates;MRS Proceedings;2001
2. Organic thin film materials producing novel blue laser;Chemical Physics Letters;1998-04
3. Liquid‐phase epitaxial growth of AlGaAsP with application to InGaP/AlGaAsP single heterostructure diodes;Journal of Applied Physics;1992-12-15
4. Luminescence from AI0.28Ga0.72AS0.62P0.38 layers grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy;Journal of Electronic Materials;1992-10
5. Growth by Liquid-Phase Epitaxy and Characterization of Al0.28Ga0.72As0.62P0.38;Japanese Journal of Applied Physics;1992-08-15
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