Film stress‐related vacancy supersaturation in silicon under low‐pressure chemical vapor deposited silicon nitride films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342441
Reference19 articles.
1. Silicon nitride single‐layer x‐ray mask
2. The Composition and Physical Properties of LPCVD Silicon Nitride Deposited with Different NH 3 / SiH2Cl2 Gas Ratios
3. Generation of Dislocations Induced by Chemical Vapor Deposited Si3N4Films on Silicon
4. Residual stress in silicon nitride films
5. Anomalous Diffusion of B and P in Si Directly Masked with Si3N4
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