AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate-Reference-Cited by-同舟云学术

AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

Published:2013-10-28 Issue:18 Volume:103 Page:181113
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cicek E.,McClintock R.,Cho C. Y.,Rahnema B.,Razeghi M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4828497

Reference23 articles.

1. F. S. Johnson, Solar Radiation: Space Materials Handbook, edited by G. G. Claus and B. S. John Singletary (Lookheed Missiles and Space Co. Sunnyvale, 1962), pp. 31–37.

2. Future of Al x Ga 1-x N materials and device technology for ultraviolet photodetectors

3. Short-wavelength solar-blind detectors-status, prospects, and markets

4. 320×256 solar-blind focal plane arrays based on AlxGa1−xN

5. Al_xGa_1−xN–based deep-ultraviolet 320×256 focal plane array

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