The effect of beamwidth on the analysis of electron‐beam‐induced current line scans
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358679
Reference45 articles.
1. Advances in the electrical assessment of semiconductors using the scanning electron microscope
2. Electron-Beam-Induced Currents in Semiconductors
3. Charge collection scanning electron microscopy
4. Photovoltaic measurements
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. On the use of Monte Carlo modeling in the mathematical analysis of scanning electron microscopy–electron beam induced current data;Applied Physics Letters;2006-11-06
2. Determination of diffusion length in samples of diffusion-length size or smaller and with arbitrary top and back surface recombination velocities;Journal of Applied Physics;2001-10
3. Qualitative and Quantitative Analysis of Thin Film Heterostructures by Electron Beam Induced Current;Solid State Phenomena;1999-04
4. A direct method of extracting surface recombination velocity from an electron beam induced current line scan;Review of Scientific Instruments;1998-04
5. A unified description of two voltage‐varying methods for evaluating surface recombination velocity from electron‐beam‐induced current: Application to normal‐ and planar‐collector configurations;Journal of Applied Physics;1996-03-15
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