Band structure of topological insulators from noise measurements in tunnel junctions-Reference-Cited by-同舟云学术

Band structure of topological insulators from noise measurements in tunnel junctions

Published:2015-12-21 Issue:25 Volume:107 Page:252402
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cascales Juan Pedro¹,Martínez Isidoro¹,Katmis Ferhat²³,Chang Cui-Zu²,Guerrero Rubén⁴,Moodera Jagadeesh S.²³,Aliev Farkhad G.¹

Affiliation:

1. Dpto. Fisica Materia Condensada C3, Instituto Nicolas Cabrera (INC), Condensed Matter Physics Institute (IFIMAC), Universidad Autonoma de Madrid, Madrid 28049, Spain

2. Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

3. Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

4. Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Cantoblanco, 28049 Madrid, Spain

Funder

Comunidad de Madrid

NSF

ONR

Spanish MINECO

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4938243

Reference41 articles.

1. Z2Topological Order and the Quantum Spin Hall Effect

2. Topological Insulators in Three Dimensions

3. Quantum Spin Hall Insulator State in HgTe Quantum Wells

4. High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

5. Tunneling Magnetoresistance Devices Based on Topological Insulators: Ferromagnet–Insulator–Topological-Insulator Junctions EmployingBi2Se3

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