Nanoscale mapping of edge-state conductivity and charge-trap activity in topological insulators
Author:
Affiliation:
1. Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
Abstract
Funder
National Research Foundation of Korea
Ministry of Trade, Industry and Energy
Samsung
Publisher
Royal Society of Chemistry (RSC)
Subject
Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2023/MH/D2MH01259F
Reference72 articles.
1. Visualizing coexisting surface states in the weak and crystalline topological insulator Bi2TeI
2. Spin Hall photoconductance in a three-dimensional topological insulator at room temperature
3. Observation of topological states residing at step edges of WTe2
4. Nanoscale Probing of Local Electrical Characteristics on MBE-Grown Bi2Te3 Surfaces under Ambient Conditions
5. Simultaneous observation of surface- and edge-states of a 2D topological insulator through scanning tunneling spectroscopy and differential conductance imaging
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