Determination of recombination parameters in silicon wafers by transient microwave absorption
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1146943
Reference14 articles.
1. Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity
2. A contactless method for determination of carrier lifetime, surface recombination velocity, and diffusion constant in semiconductors
3. Noncontact Characterization for Carrier Recombination Center Related to Si-SiO2Interface
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