Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1424464
Reference14 articles.
1. Growth characterisation of InxGa1−xAs/GaAs/AlAs vertical-cavity surface-emitting laser structure using photomodulated reflectance
2. Cryogenic VCSELs with chirped multiple quantum wells for a very wide temperature range of CW operation
3. Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)
4. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
5. Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime
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1. Photoreflectance symmetry and amplitude study of quantum dots in microcavity light emitting diode structure: The cavity-ground state exciton resonance;Journal of Applied Physics;2007-01-15
2. Direct comparison of threshold and gain characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs barriers;Applied Physics Letters;2005-08-22
3. Characterization of vertical-cavity surface-emitting laser structures by modulation spectroscopy: A status report;physica status solidi (a);2005-05
4. The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors;Dilute Nitride Semiconductors;2005
5. Spectral photoconductivity and in-plane photovoltage studies of as-grown and annealed GaInNAs/GaAs and GaInAs/GaAs quantum well structures;Semiconductor Science and Technology;2004-07-29
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