Retarded diffusion of Sb in a high concentration As background during silicon oxidation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107919
Reference13 articles.
1. Point defects and dopant diffusion in silicon
2. Surface treatment effects on atomic diffusion in Si explained without self interstitials
3. Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics
4. Boron in Near‐Intrinsic <100> and <111> Silicon under Inert and Oxidizing Ambients—Diffusion and Segregation
5. The effect of oxidation on the diffusion of phosphorus in silicon
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4. Time dependence of dopant diffusion in δ‐doped Si films and properties of Si point defects;Applied Physics Letters;1994-01-17
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