Temperature-dependent degradation mechanisms of channel mobility in ZrO2-gated n-channel metal-oxide-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2211307
Reference16 articles.
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2. Atomic layer deposition of ZrO2 on W for metal–insulator–metal capacitor application
3. Electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure
4. Dielectric property and conduction mechanism of ultrathin zirconium oxide films
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