Controlling the size and density of self-assembled PbSe quantum dots by adjusting the substrate temperature and layer thickness
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1509116
Reference11 articles.
1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
2. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
3. Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
4. Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers
5. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
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