Unintentionally doped hydrogen removal mechanism in Li doped ZnO-Reference-Cited by-同舟云学术

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Unintentionally doped hydrogen removal mechanism in Li doped ZnO

Published:2018-10 Issue:10 Volume:8 Page:105014
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Zhu Yanming¹^ORCID,Li Jingyuan²,Ji Xu¹,Li Titao³,Jin Mingge¹,Ou Xinwen²,Shen Xiaomei⁴,Wang Weiliang³,Huang Feng¹^ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, China

2. Physics Department, Zhejiang University, Hangzhou, China

3. School of Physics, Sun Yat-sen University, Guangzhou, China

4. Nanchang Normal University, Nanchang, China

Funder

National Natural Science Foundation of China

Guangzhou Science and Technology Program key projects

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/1.5052407

Reference37 articles.

1. Fundamentals of zinc oxide as a semiconductor

2. A comprehensive review of ZnO materials and devices

3. A Strategy of Transparent Conductive Oxide for UV Focal Plane Array Detector: Two-Step Thermodynamic Process

4. Vacuum-Ultraviolet Photovoltaic Detector

5. Vacuum Ultraviolet Photodetection in Two-Dimensional Oxides

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1. Structural, opto-electrical, and band-edge properties of full-series multilayer SnS1-xSex (0≤x≤1) compounds with strong in-plane anisotropy;Materials Today Advances;2023-06

2. Continuous Tuning of the Fermi Level in Disorder-Engineered Amorphous Films of Li-Doped ZnO for Thermoelectric Applications;ACS Applied Materials & Interfaces;2021-11-10

3. Performance Improvement of Amorphous Ga2O3/P-Si Deep Ultraviolet Photodetector by Oxygen Plasma Treatment;Crystals;2021-10-15

4. Multistep Thermodynamics Yielding Deep Ultraviolet Transparent Conductive Ga2O3 Films;The Journal of Physical Chemistry C;2020-07-02

5. Ultra-Robust Deep-UV Photovoltaic Detector Based on Graphene/(AlGa)2O3/GaN with High-Performance in Temperature Fluctuations;ACS Applied Materials & Interfaces;2019-12-05

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