Electronic properties of InGaP grown by solid‐source molecular‐beam epitaxy with a GaP decomposition source
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112373
Reference24 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
3. Plasma and wet chemical etching of In0.5Ga0.5P
4. Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P
5. Metalorganic precursors for vapour phase epitaxy
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