Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1695196
Reference23 articles.
1. Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy
2. Plasma etch-induced conduction changes in gallium nitride
3. Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures
4. Photoelectrochemical undercut etching for fabrication of GaN microelectromechanical systems
5. Single-crystal aluminum nitride nanomechanical resonators
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