Fabrication of planar-type Ni/vacuum/Ni tunnel junctions based on ferromagnetic nanogaps using field-emission-induced electromigration
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3565198
Reference19 articles.
1. Tunnel magnetoresistance on ferromagnetic single-electron transistors with multiple tunnel junction
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Simultaneous arrayed formation of single-electron transistors using electromigration in series-connected nanogaps;AIP Advances;2018-10
2. Structural tuning of nanogaps using electromigration induced by field emission current with bipolar biasing;Journal of Applied Physics;2015-07-07
3. Control Parameters for Fabrication of Single-Electron Transistors Using Field-Emission-Induced Electromigration;Journal of Nanoscience and Nanotechnology;2013-02-01
4. Formation Scheme of Quantum Point Contacts Based on Nanogaps Using Field-Emission-Induced Electromigration;Journal of Nanoscience and Nanotechnology;2013-02-01
5. Note: Controlled fabrication of suspended metallic vacuum tunneling gaps;Review of Scientific Instruments;2012-10
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