RC-coupled ferromagnetic single-electron transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1539073
Reference16 articles.
1. Single-electron transistors: Electrostatic analogs of the DC SQUIDS
2. Effect of Coulomb Blockade on Magnetoresistance in Ferromagnetic Tunnel Junctions
3. Tunnel magnetoresistance on ferromagnetic single-electron transistors with multiple tunnel junction
4. Enhanced Magnetic Valve Effect and Magneto-Coulomb Oscillations in Ferromagnetic Single Electron Transistor
5. Magneto-Coulomb Oscillation in Ferromagnetic Single Electron Transistors
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1. Fabrication of planar-type Ni/vacuum/Ni tunnel junctions based on ferromagnetic nanogaps using field-emission-induced electromigration;Journal of Applied Physics;2011-04
2. Fabrication of planar-type ferromagnetic tunnel junctions using electromigration method and its magnetoresistance properties;Journal of Physics: Conference Series;2010-01-01
3. Magnetoresistance Properties of Planar-Type Tunnel Junctions With Ferromagnetic Nanogap System Fabricated by Electromigration Method;IEEE Transactions on Magnetics;2009-10
4. Magnetoresistance effect of planar-type ferromagnetic tunnel junctions;Journal of Applied Physics;2006-04-15
5. Magnetoresistance of patterned NiFe thin films with structures modified by atomic force microscope nanolithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
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