Lock‐on effect in pulsed‐power semiconductor switches
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350988
Reference9 articles.
1. Electron-beam-controlled high-power semiconductor switches
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3. GaAs-based opto-thyristor for pulsed power applications
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5. Double Injection Diodes and Related DI Phenomena in Semiconductors
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1. Assessing Lock-On Physics in Semi-Insulating GaAs and InP Photoconductive Switches Triggered by Subbandgap Excitation;IEEE Transactions on Electron Devices;2018-09
2. Lock-on physics in semi-insulating GaAs: Combination of trap-to-band impact ionization, moving electric fields and photon recycling;Journal of Applied Physics;2018-02-28
3. Breakover mechanism of GaAs photoconductive switch triggering spark gap for high power applications;Journal of Applied Physics;2011-11
4. Effects of transverse doping variations on the transient response of silicon avalanche shaper devices;IEEE Transactions on Electron Devices;1998
5. Low-Field Breakdown and Negative Differential Resistance in Semi-Insulating GaAs;Japanese Journal of Applied Physics;1993-09-15
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