Multi-carrier processes in halogenated Si nanocrystals-Reference-Cited by-同舟云学术

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Multi-carrier processes in halogenated Si nanocrystals

Published:2020-09-21 Issue:11 Volume:153 Page:114304
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:J. Chem. Phys.

Author:

Derbenyova N. V.¹^ORCID,Burdov V. A.¹^ORCID

Affiliation:

1. Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Avenue, 603950 Nizhny Novgorod, Russian Federation

Funder

Russian Foundation for Basic Research

Ministry of Science and Higher Education of the Russian Federation

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0018514

Reference51 articles.

1. Silicon Nanocrystals

2. Silicon Nanoscale Materials: From Theoretical Simulations to Photonic Applications

3. Nanocrystals for silicon-based light-emitting and memory devices

4. Quantum confinement in Si and Ge nanostructures: Theory and experiment

5. Silicon nanostructures for photonics and photovoltaics

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 65 years of electron transfer;The Journal of Chemical Physics;2022-07-14

2. Recombination, multiplication, and transfer of electron-hole pairs in silicon nanocrystals: Effects of quantum confinement, doping, and surface chemistry;Journal of Luminescence;2021-05

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