Effects of electron mass anisotropy on Hall factors in 6H‐SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.115928
Reference12 articles.
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of the morphology and structural transformation of 6H-SiC induced by a single femtosecond laser pulse;Optics & Laser Technology;2024-09
2. Laser-induced periodic surface structures on 6H-SiC single crystals using temporally delayed femtosecond laser double-pulse trains;Applied Physics A;2016-03-09
3. The influence of high dielectric constant aluminum oxide sputter deposition on the structure and properties of multilayer epitaxial graphene;Nanotechnology;2011-03-28
4. Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy;Japanese Journal of Applied Physics;2006-11-17
5. Characterization of Carrier Concentration and Mobility in n-type SiC Wafers Using Infrared Reflectance Spectroscopy;Japanese Journal of Applied Physics;2004-08-10
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