The influence of high dielectric constant aluminum oxide sputter deposition on the structure and properties of multilayer epitaxial graphene-Reference-Cited by-同舟云学术

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The influence of high dielectric constant aluminum oxide sputter deposition on the structure and properties of multilayer epitaxial graphene

Published:2011-03-28 Issue:20 Volume:22 Page:205703
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Maneshian Mohammad H,Kuo Fang-Ling,Mahdak Kristopher,Hwang Junyeon,Banerjee Rajarshi,Shepherd Nigel D

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/22/i=20/a=205703/pdf

Reference32 articles.

1. High-speed graphene transistors with a self-aligned nanowire gate

2. Epitaxial graphene top-gate FETs on silicon substrates

3. Model of tunneling transistors based on graphene on SiC

4. The rise of graphene

5. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

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