Texture formation of GeSbTe thin films prepared by multilayer deposition of modulating constituent elements-Reference-Cited by-同舟云学术

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Texture formation of GeSbTe thin films prepared by multilayer deposition of modulating constituent elements

Published:2007-06-18 Issue:25 Volume:90 Page:251917
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ie Sang Yub,Bea Byung Tack,Ahn Young-kun,Chang M. Y.,You D. G.,Cho M. H.,Jeong K.,Oh Jae-Hee,Koh Gwan-Hyeob,Jeong Hongsik

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2751105

Reference11 articles.

1. Towards a universal memory?

2. Electronic Switching in Phase-Change Memories

3. Phase-Change Behavior of Stoichiometric Ge[sub 2]Sb[sub 2]Te[sub 5] in Phase-Change Random Access Memory

4. Low-cost and nanoscale non-volatile memory concept for future silicon chips

5. Reversible Electrical Switching Phenomena in Disordered Structures

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on Texture Formation of Sb2Te Thin Films for Phase Change Memory Applications;Crystals;2023-02-22

2. Use of a Ti Buffer Layer to Improve the Mechanical Properties of Ge2Sb2Te5 Thin Films for Phase-Change Memory;JOM;2020-02-10

3. The microstructural changes of Ge2Sb2Te5 thin film during crystallization process;AIP Advances;2018-05

4. Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy;RSC Advances;2018

5. The mechanism of texture formation during crystallization process of Ge2Sb2Te5thin films;Crystal Research and Technology;2017-01-19

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