Examination of Critical Length Effect in Copper Interconnects With Oxide and Low-k Dielectrics-Reference-Cited by-同舟云学术

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Examination of Critical Length Effect in Copper Interconnects With Oxide and Low-k Dielectrics

Published:2004 Issue: Volume: Page:
ISSN:0094-243X
Container-title:AIP Conference Proceedings
language:
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Author:

Thrasher Stacye

Publisher

AIP

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electromigration in Cu Interconnect Structures;Electromigration in Metals;2022-04-30

2. Effect of layout on electromigration characteristics in copper dual damascene interconnects;Microelectronic Engineering;2014-10

3. Moisture effect on electromigration characteristics for copper dual damascene interconnection;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-11

4. Large-scale statistical analysis of early failures in Cu electromigration, Part II: Scaling behavior and short-length effects;Journal of Applied Physics;2010-07

5. Large-Scale Electromigration Statistics for Cu Interconnects;MRS Proceedings;2009

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