Measuring the carrier lifetime by using a quasi-optical millimeter- and THz-wave system-Reference-Cited by-同舟云学术

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Measuring the carrier lifetime by using a quasi-optical millimeter- and THz-wave system

Published:2017-02-13 Issue:7 Volume:110 Page:074101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Choe Mun Seok¹^ORCID,Sawant Ashwini²,Lee Kyu-Sup³,Yu Nan Ei⁴,Choi EunMi¹²

Affiliation:

1. Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea

2. Department of Electrical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea

3. Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, South Korea

4. Advanced Photonics Research Institute, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, South Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4976315

Reference14 articles.

1. Measurement of differential and actual recombination parameters on crystalline silicon wafers [solar cells]

2. The study of charge carrier kinetics in semiconductors by microwave conductivity measurements

3. Interaction of microwaves with photoelectrons in semiconductors

4. Detailed analysis of the microwave-detected photoconductance decay in crystalline silicon

5. High-speed switching of far-infrared radiation by photoionization in a semiconductor

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