Measurement of Time Dependent Reflection, Transmission, and Absorption in Laser Driven Silicon and GaAs Switches for 250 GHz Radiation
Author:
Affiliation:
1. Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, USA
2. Air Force Research Laboratory, Directed Energy Directorate, Kirtland Air Force Base, Albuquerque, NM, USA
Funder
U.S. Department of Energy
High Energy Physics
National Institutes of Health
National Institute of Biomedical Imaging and Bioengineering
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Radiation
Link
https://ieeexplore.ieee.org/ielam/5503871/10170763/10109870-aam.pdf
Reference29 articles.
1. Modeling of Dynamic Effects in a Laser-Driven Semiconductor Switch of High-Power Microwaves
2. Modeling the high-speed switching of far-infrared radiation by photoionization in a semiconductor
3. Development of waveguide semiconductor switches of microwave radiation in the 70- and 260-GHz ranges;belousov;Radiophys Quantum Electron,2014
4. Laser requirements for the design of fast laser-driven semiconductor switches for THz and mm-waves
5. Switching of Subterahertz Waves Within a Duration Range of Ten Orders of Magnitude
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