Factors controlling resolution in the laser‐induced aqueous etching of semiconductors using a focused cw beam
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106177
Reference7 articles.
1. Photoelectrochemical etching of integral lenses on InGaAsP/InP light‐emitting diodes
2. Maskless chemical etching of submicrometer gratings in single‐crystalline GaAs
3. Laser fabricated GaAs waveguiding structures
4. Graded-effective-index waveguiding structures fabricated with laser processing
5. The Laser‐Controlled Micrometer‐Scale Photoelectrochemical Etching of III–V Semiconductors
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1. Fabricating Vertical Sidewalls in GaAs∕AlGaAs Heterostructure Using Light-Induced Wet Etching;Journal of The Electrochemical Society;2006
2. The influence of aluminum concentration on photoelectrochemical etching of first order gratings in GaAs/AlGaAs;Applied Physics Letters;1995-08-28
3. Rapid direct fabrication of active electro-optic modulators in GaAs;Journal of Lightwave Technology;1994
4. Photoelectrochemical etching of high aspect ratio submillimeter waveguide filters fromn+GaAs wafers;Applied Physics Letters;1992-12-14
5. Pattern formation techniques in photochemical etching;Thin Solid Films;1992-10
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