An investigation of amorphous Ge2Se3 structure for phase change memory devices using fluctuation electron microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3225566
Reference19 articles.
1. Non-volatile memory technologies: emerging concepts and new materials
2. Phase change memories: State-of-the-art, challenges and perspectives
3. Stacked chalcogenide layers used as multi-state storage medium for phase change memory
4. A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)
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