Low‐temperature rapid thermal low pressure metalorganic chemical vapor deposition of Zn‐doped InP layers using tertiarybutylphosphine-Reference-Cited by-同舟云学术

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Low‐temperature rapid thermal low pressure metalorganic chemical vapor deposition of Zn‐doped InP layers using tertiarybutylphosphine

Published:1993-11 Issue:18 Volume:63 Page:2546-2548
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Katz A.,Feingold A.,Pearton S. J.,Moriya N.,Baiocchi C. J.,Geva M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.110428

Reference8 articles.

1. Limited reaction processing: Growth of III‐V epitaxial layers by rapid thermal metalorganic chemical vapor deposition

2. Limited reaction processing: Silicon epitaxy

3. A stable indium-phosphide diffused junction field-effect transistor with high gain and low leakage

4. GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn Diffusion Technique

5. Highly dopedp+regions by zinc diffusion utilizing metalorganic vapor‐phase epitaxy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rapid Thermal Chemical Vapor Deposition;Rapid Thermal Processing of Semiconductors;1997

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