Charge polarization effects and hole spectra characteristics in AlxGa1−xN/GaN superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1464234
Reference16 articles.
1. Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices
2. Polarization induced 2D hole gas in GaN/AlGaN heterostructures
3. The Role of Internal Electric Fields in III-N Quantum Structure
4. High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN
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