Analysis of surface layers by the channeling technique: Beam energy dependence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88098
Reference7 articles.
1. Line-shape extraction analysis of silicon oxide layers on silicon by channelling effect measurements
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3. Silicon surface studies by means of proton backscattering and proton induced X-Ray emission
4. Monte Carlo Channeling Calculations
5. Channeling‐Effect Analysis of Thin Films on Silicon: Aluminum Oxide
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Calculation of surface peak intensity in MeV ion scattering. II;Surface Science;1985-10
2. A Backscattering-Channeling Study of Thermally Grown Nitride Films on Silicon;Japanese Journal of Applied Physics;1982-02-05
3. BIBLIOGRAPHY;Materials Analysis by Ion Channeling;1982
4. Radiation damage, its recovery and platinum lattice location in Pb-bombarded MgO;Journal of Physics C: Solid State Physics;1981-08-20
5. The thermal behavior of Pt/Al2O3 catalysts studied with the channeling technique;Physica Status Solidi (a);1981-04-16
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