Catastrophic and latent damage in GaAlAs lasers caused by electrical transients

Author:

Sim S. P.,Robertson M. J.,Plumb R. G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Reliability of optoelectronics;Reliability Characterisation of Electrical and Electronic Systems;2015

2. Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers;Laser & Photonics Reviews;2011-03-07

3. Human-Body-Model Electrostatic-Discharge and Electrical-Overstress Studies of Buried-Heterostructure Semiconductor Lasers;IEEE Transactions on Device and Materials Reliability;2007-09

4. GaN-Based Power LEDs With CMOS ESD Protection Circuits;IEEE Transactions on Device and Materials Reliability;2007-06

5. The Effect of Electrostatic Discharge on Electrical Overstress Susceptibility in a Gallium Arsenide MESFET-Based Device;IEEE Transactions on Device and Materials Reliability;2007-03

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