The temperature dependence of the transient current in ferroelectric Pb(ZrxTi1−x)O3 thin films for memory devices applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365664
Reference22 articles.
1. Electrical and reliability properties of PZT thin films for ULSI DRAM applications
2. Progress in ferroelectric memory technology
3. Ferroelectric Memories
4. Electronic Conduction Characteristics of Sol-Gel Ferroelectric $\bf Pb(Zr_{0.4}Ti_{0.6})O_{3}$ Thin-Film Capacitors: Part I
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