Thermoelectric properties of p-type polycrystalline Bi0.8Sb0.8In0.4Se3-Reference-Cited by-同舟云学术

Thermoelectric properties of p-type polycrystalline Bi0.8Sb0.8In0.4Se3

Published:2021-05-10 Issue:19 Volume:118 Page:193903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jiang Feng¹²,Xia Chengliang²^ORCID,Zhu Yongbin¹³,Han Zhijia¹,Liu Chengyan⁴,Xia Jiating¹,Chen Yue²^ORCID,Liu Weishu¹³^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China

2. Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China

3. Key Laboratory of Energy Conversion and Storage Technologies (Ministry of Education), Southern University of Science and Technology, Shenzhen 518055, Guangdong, China

4. Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China

Funder

National Key Research and Development Program of China

Environment and Conservation Fund

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0050604

Reference28 articles.

1. Scanning tunneling microscopy of defect states in the semiconductorBi2Se3

2. Native point defects in Bi2Se3: A first-principles study

3. Point Defect Engineering of High-Performance Bismuth-Telluride-Based Thermoelectric Materials

4. n-type to p-type crossover in quaternary BixSbyPbzSe3 single crystals

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