Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3567927
Reference14 articles.
1. GaN-Based RF Power Devices and Amplifiers
2. GaN Power Transistors on Si Substrates for Switching Applications
3. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
4. Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs
5. Influence of the Structural and Compositional Properties of PECVD Silicon Nitride as a Passivation Layer for AlGaN HEMTs
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