Effect of thermal annealing on carrier localization and efficiency of spin detection in GaAsSb epilayers grown on InP-Reference-Cited by-同舟云学术

Effect of thermal annealing on carrier localization and efficiency of spin detection in GaAsSb epilayers grown on InP

Published:2018-04 Issue:4 Volume:8 Page:045021
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Zhang Bin¹²,Chen Cheng³^ORCID,Han Junbo³^ORCID,Jin Chuan⁴,Chen Jianxin⁴^ORCID,Wang Xingjun¹^ORCID

Affiliation:

1. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China

4. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Funder

Hundred Talents Program,CAS

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5027803

Reference37 articles.

1. Temperature dependence of the band gap of GaAsSb epilayers

2. Raman and photoluminescence spectra of GaAs1−xSbx

3. light emitting diodes

4. GaAsSb: a novel material for near infrared photodetectors on GaAs substrates

5. High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K

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