Raman scattering analysis of relaxed GexSi1−xalloy layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109481
Reference13 articles.
1. Anomalous strain relaxation in SiGe thin films and superlattices
2. Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices
3. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
4. Electron resonant tunneling in Si/SiGe double barrier diodes
5. High-transconductance n-type Si/SiGe modulation-doped field-effect transistors
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