Comparative electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer based nonvolatile memory device architectures-Reference-Cited by-同舟云学术

Comparative electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer based nonvolatile memory device architectures

Published:2008-11-03 Issue:18 Volume:93 Page:182902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Choi Chang Woo,Prabu Arun Anand,Kim Yu Min,Yoon Sun,Kim Kap Jin,Park Cheolmin

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3013835

Reference16 articles.

1. Critical thickness of crystallization and discontinuous change in ferroelectric behavior with thickness in ferroelectric polymer thin films

2. Dependence of threshold thickness of crystallization and film morphology on film processing conditions in poly(vinylidene fluoride–trifluoroethylene) copolymer thin films

3. Crystalline structures and ferroelectric properties of ultrathin films of vinylidene fluoride and trifluoroethylene copolymer

4. Structural correlation between crystal lattice and lamellar morphology in the ferroelectric phase transition of vinylidene fluoride–trifluoroethylene copolymers as revealed by the simultaneous measurements of wide-angle and small-angle X-ray scatterings

5. Infrared spectroscopic studies on crystallization and Curie transition behavior of ultrathin films of P(VDF/TrFE) (72/28)

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