Investigation of the evolution of single domain (111)B CdTe films by molecular beam epitaxy on miscut (001)Si substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368647
Reference27 articles.
1. Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition
2. Growth of (100) oriented CdTe on Si using Ge as a buffer layer
3. CdTe(111)B/Si(100) structure grown by metalorganic vapor phase epitaxy with Te adsorption and annealing
4. Growth of (111) CdTe on GaAs/Si and Si substrates for HgCdTe epitaxy
5. CdTe(111) growth on misoriented Si(100) substrates by hot-wall epitaxy
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