Possible observation of Pb0and Pb1centers at irradiated (100)Si/SiO2interface from electrical measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105693
Reference4 articles.
1. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers
2. MOS interface states: overview and physicochemical perspective
3. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
4. Interface trap transformation in radiation or hot-electron damaged MOS structures
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