Semiconductor layer thickness impact on optical and resistive switching behavior of pulsed laser deposited BaTiO3/ZnO heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4809531
Reference20 articles.
1. Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3
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4. Reproducible memory effect in the leakage current of epitaxial ferroelectric/conductive perovskite heterostructures
5. Oxygen level: the dominant of resistive switching characteristics in cerium oxide thin films
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