Negative differential resistance and multilevel resistive switching in BaSrTiO3 films
Author:
Affiliation:
1. School of Optical and Electronic Information, Huazhong University of Science and Technology, LuoYu Road, Wuhan 430074, China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5113883
Reference34 articles.
1. Strain-relieved Ba0.6Sr0.4TiO3 thin films for tunable microwave applications
2. Nonlinear response and power handling capability of ferroelectric BaxSr1−xTiO3 film capacitors and tunable microwave devices
3. Temperature stable BaSrTiO3 thin films suitable for microwave applications
4. Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba,Sr)TiO/sub 3/ thin-film capacitors for Gbit-scale DRAMs
5. Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories
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