Temperature stability of ZnO:Al film properties for poly-Si thin-film devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2824456
Reference19 articles.
1. Preparation of High-Quality n-Type Poly-Si Films by the Solid Phase Crystallization (SPC) Method
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3. A novel route to a polycrystalline silicon thin-film solar cell
4. Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature
5. Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization
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